文献类型：期刊文献

中文题名：新型电子俘获型光存储材料Sr_2SnO_4:Sb^(3+)的发光性能研究

英文题名：The luminescence properties of a novel electron trapped material Sr_2SnO_4:Sb^(3+) for optical storage

作者：王治龙[1];郑贵森[1];王世钦[1];秦青松[2];周宏亮[2];张加驰[2]

第一作者：王治龙

通信作者：Zhang, JC[1]

机构：[1]甘肃中医学院,兰州730000;[2]兰州大学物理科学与技术学院,兰州730000

第一机构：甘肃中医药大学

通信机构：[1]corresponding author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.

年份：2012

卷号：61

期号：12

起止页码：511

中文期刊名：物理学报

外文期刊名：Acta Physica Sinica

收录：CSTPCD;;Scopus;北大核心:【北大核心2011】；CSCD:【CSCD2011_2012】；

基金：Project supported by the National Nature Science Young Foundation of China (Grant No. 10904057), the Traditional Chinese Medicine Research Foundation of Gansu (Grant No. GZK-2010-54), the National College of innovative pilot scheme (Grant No. 101073005), and the Central Scientific Research operating expenses (Grant No. Lzjbky-2011-125).

语种：中文

中文关键词：Sr_2SnO_4:Sb^3+;红外上转换光激励;光存储

外文关键词：Sr2SnO4 ：Sb3＋, photostimulated luminescence, optical storage

摘要：采用高温固相法在1300℃的温度获得了一种新型电子俘获型光存储材料Sr_2SnO_4:Sb^(3+).结果表明:208 nm(Sb^(3+)的~1S_0→~1P_1)和265 nm(~1S_0→~3P_1)的紫外光是Sr_2SnO_4:Sb^(3+)的最有效信息写入光源;其发射是覆盖400—700 nm的宽带(~3P_(0,1)→~1S_0),肉眼可看到淡黄色白光,色坐标为(0.341,0.395).热释光谱研究结果表明:Sr_2SnO_4:Sb^(3+)有分别位于39℃,124℃,193℃和310℃的四个热释峰.其中,39℃的热释峰强度很低,因而Sr_2SnO_4:Sb^(3+)只具有不到140 s的微弱余辉.而310℃的高温热释峰在空置1天后,仍能保持约45.6%的初始强度,并对980 nm的红外光有很好的红外上转换光激励响应.因此,Sr_2SnO_4:Sb^(3+)是一种具有一定的信息存储应用潜力的新型光存储发光材料.
A novel electron trapped material Sr2SnO4：Sb3＋ for optical storage is successfully obtained by conventional solid state method at 1300 °C It indicates that the 1So - 3p1 （208 nm） and 1So -3P1 （265 nm） transitions of Sb3＋ are the most efficient writing light source. Its emission covers 400-700 nm and can be attributed to 3po,1 -1So transition of Sb3＋. We can observe yellowish white light and its color coordination is （0.341, 0.395）. The thermoluminescence of Sr2SnO4：Sb3＋ contains four peaks at about 39 °C, 124 °C, 193 °C and 310 °C, respectively. The intensity of peak at 39 °C is low and thus it has a weak afterglow which can last only 140 s. However, even after putting it in dark for I day, the peak at 310 C can still keep 45.6% of its original intensity and can be efficiently stimulated by 980 nm infrared laser. As a conclusion, the Sr2SnO4：Sb3＋ is a promising electron trapping material for application in optical storage.