文献类型：会议论文

英文题名：The Study on the Defect States and Persistent Luminescent Mechanism of MgSiO₃: Mn²⁺, Dy³⁺ Phosphor

作者：Wang, Zhilong[1];Chen, Hui[1];Zhao, Yali[1];Yang, Binya[2];Zhou, Fei[1]

第一作者：Wang, Zhilong

通信作者：Wang, ZL[1]

机构：[1]Gansu Coll Tradit Chinese Med, Nanomed Lab, Lanzhou 730000, Peoples R China;[2]IRICO, Xianyang 712021, Shanxi, Peoples R China

第一机构：甘肃中医药大学

通信机构：[1]corresponding author), Gansu Coll Tradit Chinese Med, Nanomed Lab, Lanzhou 730000, Peoples R China.|[10735]甘肃中医药大学;

会议论文集：International Symposium on Chemical Engineering and Materials Properties (ISCEMP 2011)

会议日期：NOV 04-06, 2011

会议地点：Shenyang, PEOPLES R CHINA

语种：英文

外文关键词：MgSiO3:Mn2+; Dy3+; Persistent luminescence; Positron annihilation

年份：2012

摘要：In order to clarify the role of Dy3+ on persistent luminescence properties of MgSiO3:Mn2+, Dy3+ and explain the persistent luminescent mechanism, the positron annihilation technique was used to study the defect states of MgSiO3:Mn2+, Dy3+. It was revealed that the structure of deeper traps were not normally respected Mg2+ vacancies and oxygen vacancies but the associated defect V-Mg ''-2Dy(Mg)(center dot) which emerged by Dy3+ doping in MgSiO3:Mn2+. This associated defect V-Mg ''-2Dy(Mg)(center dot) resulted in the excellent persistent luminescence in MgSiO3:Mn2+, Dy3+ phosphor and a possible persistent luminescent mechanism for MgSiO3:Mn2+, Dy3+ was given.