文献类型：期刊文献

英文题名：The luminescence properties of a novel electron trapped material Sr₂SnO₄:Sb³⁺ for optical storage

作者：Wang Zhi-Long[2];Zheng Gui-Seng[2];Wang Shi-Qin[2];Qin Qing-Song[1];Zhou Hong-Liang[1];Zhang Jia-Chi[1]

第一作者：Wang Zhi-Long

通信作者：Zhang, JC[1]

机构：[1]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;[2]Gansu Univ Tradit Chinese Med, Lanzhou 730000, Peoples R China

第一机构：Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

通信机构：[1]corresponding author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.

年份：2012

卷号：61

期号：12

外文期刊名：ACTA PHYSICA SINICA

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000306394400066)】；

基金：Project supported by the National Nature Science Young Foundation of China (Grant No. 10904057), the Traditional Chinese Medicine Research Foundation of Gansu (Grant No. GZK-2010-54), the National College of innovative pilot scheme (Grant No. 101073005), and the Central Scientific Research operating expenses (Grant No. Lzjbky-2011-125).

语种：英文

外文关键词：Sr2SnO4:Sb3+; photostimulated luminescence; optical storage

摘要：A novel electron trapped material Sr2SnO4:Sb3+ for optical storage is successfully obtained by conventional solid state method at 1300 degrees C It indicates that the S-1(0) -> P-1(1) (208 nm) and S-1(0) -> P-3(1) (265 nm) transitions of Sb3+ are the most efficient writing light source. Its emission covers 400-700 nm and can be attributed to P-3(0,1) -> S-1(0) transition of Sb3+. We can observe yellowish white light and its color coordination is (0.341, 0.395). The thermoluminescence of Sr2SnO4:Sb3+ contains four peaks at about 39 degrees C, 124 degrees C, 193 degrees C and 310 degrees C, respectively. The intensity of peak at 39 degrees C is low and thus it has a weak afterglow which can last only 140 s. However, even after putting it in dark for I day, the peak at 310 degrees C can still keep 45.6% of its original intensity and can be efficiently stimulated by 980 nm infrared laser. As a conclusion, the Sr2SnO4:Sb3+ is a promising electron trapping material for application in optical storage.