详细信息
新型电子俘获型光存储材料Sr2Sn04:Sb3+的发光性能研究
The luminescence properties of a novel electron trapped material Sr2SnOi:Sb3+ for optical storage
文献类型:期刊文献
中文题名:新型电子俘获型光存储材料Sr2Sn04:Sb3+的发光性能研究
英文题名:The luminescence properties of a novel electron trapped material Sr2SnOi:Sb3+ for optical storage
作者:王治龙[1];郑贵森[1];王世钦[1];秦青松[2];周宏亮[2];张加驰[2]
第一作者:王治龙
机构:[1]甘肃中医学院;[2]兰州大学
第一机构:甘肃中医药大学
年份:2012
期号:12
中文期刊名:物理学报
外文期刊名:Acta Physica Sinica
基金:国家自然科学青年基金(10904057);甘肃省中医药科研立项课题(GZK-2010-54);国家大学生创新性实验计划(101073005);中央高校科研业务费((Lzjbky.2011-125)资助的课题)
语种:中文
中文关键词:Sr2SnO4:Sb3+;红外上转换光激励;光存储
外文关键词:Sr2SnO4 :Sb3+;photostimulated luminescence;optical storage
摘要:采用高温固相法在1300°C的温度获得了一种新型电子俘获型光存储材料Sr2Sn04:Sb3+.结果表明:208nm(Sb3+的So-P1)和265nm(1so-3P1)的紫外光是Sr2Sn04:Sb3+的最有效信息写入光源;其发射是覆盖400-700nm的宽带(3Po1-1So),肉眼可看到淡黄色白光,色坐标为(0.341,0.395).热释光谱研究结果表明:Sr2Sn04:Sb3+有分别位于39°C,124°C,193°C和310°C的四个热释峰.其中,39°C的热释峰强度很低,因而Sr2Sn04:Sb3+只具有不到140S的微弱余辉.而310°C的高温热释峰在空置1天后,仍能保持约45.6%的初始强度,并对980nm的红外光有很好的红外上转换光激励响应.因此,Sr2Sn04:Sb3+是一种具有一定的信息存储应用潜力的新型光存储发光材料.
A novel electron trapped material Sr2SnO4:Sb3+ for optical storage is successfully obtained by conventional solid state method at 1300 °C It indicates that the 1So - 3p1 (208 nm) and 1So -3P1 (265 nm) transitions of Sb3+ are the most efficient writing light source. Its emission covers 400-700 nm and can be attributed to 3po,1 -1So transition of Sb3+. We can observe yellowish white light and its color coordination is (0.341, 0.395). The thermoluminescence of Sr2SnO4:Sb3+ contains four peaks at about 39 °C, 124 °C, 193 °C and 310 °C, respectively. The intensity of peak at 39 °C is low and thus it has a weak afterglow which can last only 140 s. However, even after putting it in dark for I day, the peak at 310 C can still keep 45.6% of its original intensity and can be efficiently stimulated by 980 nm infrared laser. As a conclusion, the Sr2SnO4:Sb3+ is a promising electron trapping material for application in optical storage.
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